Phase change memory with a select device having a breakdown...

Details Phase change memory with a select device having a breakdown... Phase change memory with a select device having a breakdown...

2006-09-12

2006-09-12

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S003000, C257S296000

Reexamination Certificate

active

07105408

ABSTRACT:
A select device may have its threshold current reduced relative to the threshold current of a phase change memory element by providing within the select device a breakdown layer. Because the breakdown layer forms a breakdown filament along its length, the relative area between layers may be reduced, reducing the threshold current of the select device relative to that of the memory element. In addition, a stack may be formed with the select device over the memory element. The select device may be arranged so that the position of the breakdown filament may be moved inwardly relative to the etched edge to also reduce leakage current. In one embodiment, sidewall spacers may be formed on a portion of the select device.

REFERENCES:
patent: 2004/0113192 (2004-06-01), Wicker
patent: 2005/0077515 (2005-04-01), Kostylev
Van Landingham, “Circuit Applications of Ovonic Switching Devices”, IEEE Transactions on Electron Devices, vol. ED-20, No. 2, Feb. 1973.

Affiliated with

Also associated with

Rating

Phase change memory with a select device having a breakdown... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory with a select device having a breakdown..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory with a select device having a breakdown... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3566656