Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-04
2006-07-04
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S639000, C438S672000, C438S675000
Reexamination Certificate
active
07071055
ABSTRACT:
This invention relates to contact structures for use in integrated circuits and methods of fabricating contact structures. In one embodiment, a contact structure includes a conductive layer, one or more barrier layers formed above the conductive layer, and a barrier structure encircling the polysilicon layer and the one or more barrier layers. In an alternate embodiment, a contact structure is fabricated by forming a polysilicon layer on a substrate, forming a tungsten nitride layer above the polysilicon layer, and etching the polysilicon layer and the tungsten nitride layer to a level below the surface of a substrate structure. A silicon nitride layer is formed above the tungsten nitride layer, and a ruthenium silicide layer is formed above the silicon nitride layer. The ruthenium silicide layer is then polished.
REFERENCES:
patent: 5413961 (1995-05-01), Kim
patent: 5773314 (1998-06-01), Jiang et al.
patent: 5869901 (1999-02-01), Kusuyama
patent: 5939746 (1999-08-01), Koyama et al.
patent: 6093615 (2000-07-01), Schuele et al.
patent: 6159839 (2000-12-01), Jeng et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6271131 (2001-08-01), Uhlenbrock et al.
patent: 6348709 (2002-02-01), Graettinger et al.
patent: 6410397 (2002-06-01), Ochiai et al.
patent: 6417101 (2002-07-01), Hong
patent: 6433430 (2002-08-01), Sharan et al.
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6589867 (2003-07-01), Schuele et al.
patent: 6731007 (2004-05-01), Saito et al.
patent: 2001/0045591 (2001-11-01), Tsunemine et al.
patent: 2001/0053576 (2001-12-01), BeBoer et al.
patent: 2002/0008265 (2002-01-01), Beitel et al.
patent: 2002/0011615 (2002-01-01), Nagata et al.
patent: 2002/0011618 (2002-01-01), Ishibashi et al.
patent: 2002/0022334 (2002-02-01), Yang et al.
patent: 2002/0025665 (2002-02-01), Juengling
patent: 2002/0052126 (2002-05-01), Lee et al.
patent: 2002/0056864 (2002-05-01), Agarwal
patent: 2002/0072223 (2002-06-01), Gilbert et al.
patent: 2002/0098628 (2002-07-01), Hamada et al.
Brewster William M.
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Method of forming a contact structure including a vertical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a contact structure including a vertical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a contact structure including a vertical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3562792