Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-09
2006-05-09
Nguyen, Ha (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S212000, C438S282000, C438S289000, C438S514000
Reexamination Certificate
active
07041560
ABSTRACT:
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a heavily doped region of a first conductivity and has a lightly doped region of the first conductivity. The semiconductor substrate a plurality of trenches etched into an active region of the substrate forming a plurality of mesas. A preselected area in the active region is oxidized and then etched using a dry process oxide etch to remove the oxide in the bottoms of the trenches. A protective shield is formed over a region at a border between the active region and the termination region. The protective shield is partially removed from over the preselected area. Dopants are implanted at an angle into mesas in the preselected area. The plurality of trenches are with an insulating material, the top surface of the structure is planarized and a superjunction device is formed on the structure.
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Akin Gump Strauss Hauer & Feld & LLP
Lee Cheung
Nguyen Ha
Third Dimension (3D) Semiconductor, Inc.
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