Method for modulating flatband voltage of devices having...

Details Method for modulating flatband voltage of devices having... Method for modulating flatband voltage of devices having...

2006-04-25

2006-04-25

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S785000

Reexamination Certificate

active

07033894

ABSTRACT:
A method for modulating the flatband voltage of semiconductor devices includes post-deposition annealing of a high-k dielectric film deposited by chemical vapor deposition, for example. The modulation of the flatband voltage, and thus, the threshold voltage of MOSFET devices, is achieved by post-deposition annealing of the high-k dielectric film and control of the annealing parameters. These include annealing gases, annealing temperatures and annealing times.

REFERENCES:
patent: 3793090 (1974-02-01), Barile et al.
patent: 6455330 (2002-09-01), Yao et al.
patent: 6743682 (2004-06-01), Woerlee et al.
patent: 6844604 (2005-01-01), Lee et al.

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