Low temperature method for forming a thin, uniform oxide

Details Low temperature method for forming a thin, uniform oxide Low temperature method for forming a thin, uniform oxide

2006-04-18

2006-04-18

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S770000, C438S771000

Reexamination Certificate

active

07030038

ABSTRACT:
This invention pertains generally to forming thin oxides at low temperatures, and more particularly to forming uniformly thick, thin oxides. We disclose a low temperature method for forming a thin, uniform oxide16on a silicon surface12. This method includes providing a partially completed integrated circuit on a semiconductor substrate10with a clean, hydrogen terminated or atomically flat, silicon surface12; and stabilizing the substrate at a first temperature. The method further includes exposing the silicon surface to an atmosphere14including ozone, while maintaining the substrate10at the first temperature. In this method, the exposing step creates a uniformly thick, oxide film16. This method is suitable for room temperature processing.

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