Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-16
2006-05-16
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S238000, C438S381000
Reexamination Certificate
active
07045420
ABSTRACT:
A high density semiconductor device is formed with a constant capacitor capacitance. The semiconductor device includes a memory cell region and a peripheral circuit region. An insulating film, having an upper surface, is formed on a major surface of a semiconductor substrate to extend from the memory cell region to the peripheral circuit region. A capacitor lower electrode is formed in the memory cell region to upwardly extend beyond the upper surface of the insulating film on the major surface of the semiconductor substrate. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. The upper surface of the insulating film is located between the top surface and the bottom surface of the capacitor lower electrode part.
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Arima Hideaki
Shimizu Masahiro
Tanaka Yoshinori
McDermott Will & Emery LLP
Nhu David
Renesas Technology Corp.
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