Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-07-04
2006-07-04
Dinh, Paul (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000
Reexamination Certificate
active
07073139
ABSTRACT:
A method for determining contact location for embedded dynamic random access memory (eDRAM) formed in a silicon-on-insulator (SOI) substrate includes reviewing contact design data for an eDRAM device and discarding contact locations corresponding to contact shapes within a support area of the eDRAM device. Contact locations corresponding to bitline contacts to storage cells within the eDRAM device are saved and outputted to a custom design level to be used in forming body contacts for the eDRAM formed in the SOI substrate.
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Bard Karen A.
Ho Herbert L.
Cantor & Colburn LLP
Dinh Paul
Schnurmann H. Daniel
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