Strained channel on insulator device

Details Strained channel on insulator device Strained channel on insulator device

2006-04-18

2006-04-18

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257S347000

Reexamination Certificate

active

07029994

ABSTRACT:
A semiconductor device10includes a substrate12(e.g., a silicon substrate) with an insulating layer14(e.g., an oxide such as silicon dioxide) disposed thereon. A first semiconducting material layer16(e.g., SiGe) is disposed on the insulating layer14and a second semiconducting material layer18(e.g., Si) is disposed on the first semiconducting material layer16. The first and second semiconducting material layers16and18preferably have different lattice constants such that the first semiconducting material layer16is compressive and the second semiconducting material layer is tensile18.

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