Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-11
2006-04-11
Lebentritt, Michael S. (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S683000, C438S685000, C438S686000, C438S648000, C438S649000, C438S650000, C438S651000, C438S655000, C438S656000
Reexamination Certificate
active
07026243
ABSTRACT:
A method of forming a conductive metal silicide by reaction of metal with silicon is described. A method includes providing a semiconductor substrate with an exposed elemental silicon-containing surface. At least one of a nitride, boride, carbide, or oxide-comprising layer is atomic layer deposited onto the exposed elemental silicon-containing surface to a thickness no greater than 15 Angstroms. This ALD-deposited layer is exposed to plasma and a conductive reaction layer including at least one of an elemental metal or metal-rich silicide is deposited onto the plasma-exposed layer. Metal of the conductive reaction layer is reacted with elemental silicon of the substrate effective to form a conductive metal silicide-comprising contact region electrically connecting the conductive reaction layer with the substrate. Other aspects and implementations are contemplated.
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Lebentritt Michael S.
Owens Beth E.
Wells St. John P.S.
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