Systems and methods for forming tantalum oxide layers and...

Details Systems and methods for forming tantalum oxide layers and... Systems and methods for forming tantalum oxide layers and...

2006-04-18

2006-04-18

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S681000, C438S778000, C438S643000

Reexamination Certificate

active

07030042

ABSTRACT:
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.

REFERENCES:
patent: 4525468 (1985-06-01), Mack et al.
patent: 5256244 (1993-10-01), Ackerman
patent: 5401305 (1995-03-01), Russo et al.
patent: 5468687 (1995-11-01), Carl et al.
patent: 5487918 (1996-01-01), Akhtar
patent: 5780115 (1998-07-01), Park et al.
patent: 5863337 (1999-01-01), Neuman et al.
patent: 6118146 (2000-09-01), Park et al.
patent: 6133086 (2000-10-01), Huang et al.
patent: 6146959 (2000-11-01), DeBoer et al.
patent: 6200847 (2001-03-01), Kishiro
patent: 6265260 (2001-07-01), Alers et al.
patent: 6328947 (2001-12-01), Monden et al.
patent: 6487918 (2002-12-01), DeAngelis
patent: 2002/0094634 (2002-07-01), Chung et al.
patent: 2002/0102810 (2002-08-01), Iizuka et al.
patent: 2002/0157611 (2002-10-01), Bondestam et al.
patent: 2003/0143328 (2003-07-01), Chen et al.
patent: 2004/0043633 (2004-03-01), Vaartstra
patent: WO 9526355 (1995-10-01), None
Chaneliere et al., “Dielectric Permittivity of Amorphous and Hexagonal Electron Cyclotron Resonance Plasma Deposited Ta2O5Thin Films,”Electrochemical and Solid-State Letters, 1999, Jun.; 2(6):291-3.
Kishiro et al., “Structure and Electrical Properties of Thin Ta2O5Deposited on Metal Electrodes,”Jpn. J. Appl. Phys., 1998, Mar.; 37(3B):1336-9.
Lin et al, “Ta2O5thin films with exceptionally high dielectric constant,”Applied Physics Letter, 1999, Apr.; 74(16):2370-2.
“Refractory metal,”Webster's New Universal Unabridged Dictionary, Avenel, New Jersey, 1992; p. 1207.
Vehkamäki et al., “Growth of SrTiO3and BaTiO3Thin Films by Atomic Layer Deposition,”Electrochemical and Solid-State Letters, 1999; 2(10):504-6.
Grant&Hackh's Chemical Dictionary, McGraw-Hill Book Company, 5thedition, 1987: 221.
Hawley,The Condensed Chemical Dictionary, 10thEdition, Van Nostrand Reinhold Co., New York, 1981; 225-226.
Jiménez et al., “Deposition of Ta2O5and (Tio2)-(Ta2O5) films from Ta(OEt)4(DMAE) and Ti(OEt)2(DMAE)2by IMOCVD,”J. Phys. IV France, 1999; 9:Pr8-569-Pr8-573.
“Material Safety Data Sheet-Catalog # 235733, Name: 1,1,3,3-Tetramethyldisiloxane, 97%”Aldrich Chemical Co., Inc. [online]. [retrieved Jun. 23, 2003]. Retrieved from the internet: <http://infonew.sigma-aldrich.com/cgi-bin/gx.cgi/Applogic+MSDSInfo.ReturnMSDS>; 3 pgs.
“Material Safety Data Sheet- Catalog # 326739, Name: Hexamethyldisiloxane, 99.5+%, NMR Grade,”Aldrich Chemical Co., Inc. [online].[retrieved Jun. 23, 2003]. Retrieved from the internet: <http://infonew.sigma-aldrich.com/cgi-bin/gx.cgi/Applogic+MSDSInfo.ReturnMSDS>;3 pgs.
“Refractory,”Webster's New Universal Unabridged Dictionary, Avenel, New Jersey, 1992; p. 1207.

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