Method and apparatus for forming a thin film

Details Method and apparatus for forming a thin film Method and apparatus for forming a thin film

2006-04-18

2006-04-18

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Reexamination Certificate

active

07030475

ABSTRACT:
In a method of uniformly forming a thin film on a wafer and an apparatus of using the same, after supplying a first gas, a second gas and a third gas into a reaction chamber in which a wafer is loaded, a thin film is formed on the wafer from the first gas and the second gas. The third gas stabilizes the second gas. A wafer holder is disposed in the reaction chamber. A gas-supplying unit extended to the reaction chamber supplies more gas to the central portion of the wafer than to a peripheral portion of the wafer. The contaminant particles formed from the second gas are removed by using the gas-supplying unit and the third gas. The first gas is supplied more at the central portion of the wafer than at a peripheral portion of the wafer, thereby forming a thin film of high quality on the wafer.

REFERENCES:
patent: 5221556 (1993-06-01), Hawkins et al.
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6200911 (2001-03-01), Narwankar et al.
patent: 6468927 (2002-10-01), Zhang et al.
patent: 2002-43311 (2002-02-01), None
patent: 2002-0022579 (2002-03-01), None

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