Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2006-07-11
2006-07-11
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S164000, C257S314000
Reexamination Certificate
active
07075820
ABSTRACT:
A semiconductor memory device includes a plurality of MIS transistors arranged at intersections of first word lines and bit lines formed on an SOI substrate and each configuring a memory cell. Each of the plurality of MIS transistors includes a channel body formed in a semiconductor layer on an insulating film and set in an electrically floating state, a first extension region formed in contact with the channel body in the semiconductor layer and arranged in a first word line direction, a gate insulating film formed on the channel body, a gate electrode formed on the gate insulating film and electrically connected to a corresponding one of the first word lines, and source and drain regions separately formed in a bit line direction in the semiconductor layer to sandwich the channel body.
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Asao Yoshiaki
Horiguchi Fumio
Iwata Yoshihisa
Ohsawa Takashi
Yamada Takashi
Dinh Son T.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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