Method for reducing anti-reflective coating layer removal...

Details Method for reducing anti-reflective coating layer removal... Method for reducing anti-reflective coating layer removal...

2006-03-21

2006-03-21

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S700000, C438S749000

Reexamination Certificate

active

07015134

ABSTRACT:
A method and system for providing a semiconductor device. The semiconductor device includes a first layer to be etched. The method and system include depositing an anti-reflective coating. At least a portion of the anti-reflective coating layer is on the first layer. The method and system also include patterning a resist layer. The resist layer includes a pattern having a plurality of apertures therein. The resist layer is for etching the first layer. A first portion of the first layer and a second portion of the anti-reflective coating layer are exposed by the pattern. The method and system also include etching the first portion of the first layer and the second portion of the anti-reflective coating layer and removing the resist layer utilizing a plasma etch. The anti-reflective coating layer is resistant to the plasma etch.

REFERENCES:
patent: 6159661 (2000-12-01), Huang et al.
patent: 6184142 (2001-02-01), Chung et al.
patent: 6222241 (2001-04-01), Plat
patent: 6265751 (2001-07-01), Plat et al.
patent: 6268457 (2001-07-01), Kennedy et al.
patent: 6423628 (2002-07-01), Li et al.
patent: 6573175 (2003-06-01), Yin et al.

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