Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-01-31
2006-01-31
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S221000, C438S296000, C438S427000, C438S435000, C438S626000
Reexamination Certificate
active
06992024
ABSTRACT:
A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; exposing the layer of spin-on glass material to a solvent; curing the layer of spin-on glass material; and depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.
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Cox Michael S.
Cui Zhenjiang
Roberts Rick J.
Zhao Jun
Applied Materials Inc.
Ghyka Alexander
Townsend and Townsend and Crew
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