Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2006-07-25
2006-07-25
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S233500, C365S222000, C365S238500
Reexamination Certificate
active
07082063
ABSTRACT:
With the objective of providing a semiconductor memory device which is made identical in usability to a static RAM by use of dynamic memory cells and realizes a high-speed memory cycle time, there is provided a pseudo static RAM having a time multiplex mode which, when instructions for a memory operation for reading memory information from each of memory cells each requiring a refresh operation for periodically holding the memory information, or writing the same therein is issued, carries out an addressing-based autonomous refresh operation different from the memory operation before or after the memory operation. The pseudo static RAM includes address signal transition detectors for a row and a column, and a page mode which independently performs a column address selecting operation according to an address signal transition detect signal of the second address signal transition detector.
REFERENCES:
patent: 4636991 (1987-01-01), Flannagan et al.
patent: 4809233 (1989-02-01), Takemae
patent: 5335206 (1994-08-01), Kawamoto
patent: 5430686 (1995-07-01), Tokami et al.
patent: 5566129 (1996-10-01), Nakashima et al.
patent: 6392958 (2002-05-01), Lee
patent: 6643205 (2003-11-01), Kim
patent: 61-71494 (1984-09-01), None
patent: 1-94593 (1987-10-01), None
Horiguchi Masashi
Kawase Yasushi
Saitoh Yoshikazu
Yahata Hideharu
A. Marquez, Esq. Juan Carlos
Dinh Son T.
Fisher Esq. Stanley P.
Hitachi Device Engineering & Co., Ltd.
Reed Smith LLP
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3524352