Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-07
2005-06-07
Tran, Thien F (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S488000, C438S591000
Reexamination Certificate
active
06902977
ABSTRACT:
According to one exemplary embodiment, a method for forming a field-effect transistor on a substrate comprises a step of forming a high-k dielectric layer over the substrate. The high-k dielectric layer may be, for example, hafnium oxide or zirconium oxide. The method further comprises forming a first polysilicon layer over the high-k dielectric layer, where the first polysilicon layer is formed by utilizing a precursor does not comprise hydrogen. The first polysilicon layer can have a thickness of between approximately 50.0 Angstroms and approximately 200.0 Angstroms, for example. According to this exemplary embodiment, the method can further comprise forming a second polysilicon layer over the first polysilicon layer. The second polysilicon layer may be formed, for example, by utilizing a precursor that comprises hydrogen, where the first polysilicon layer prevents the hydrogen from interacting with the high-k dielectric layer.
REFERENCES:
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6620713 (2003-09-01), Arghavani et al.
Jeon Joong S.
Kluth George J.
Xiang Qi
Zhong Huicai
Advanced Micro Devices , Inc.
Farjami & Farjami LLP
Tran Thien F
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