Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-15
2005-11-15
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S424000, C438S435000, C438S437000, C438S770000
Reexamination Certificate
active
06964905
ABSTRACT:
An active region on a semiconductor substrate is electrically isolated by trench isolation. A structure of the trench isolation is constituted of: a trench; a silicon oxide film formed on the inner wall of trench; an oxidation preventive film formed between silicon oxide film and semiconductor substrate; and a filling oxide film filling trench. Gate oxide film is formed by oxidation having a high capability by which radicals of at least one kind of hydrogen radicals and oxygen radicals are generated. Thereby, gate oxide film is formed so as to have a almost uniform thickness such that a thickness of a region directly above oxidation preventive film and a thickness of a region directly below gate electrode are almost the same is each other. According to the above procedure, there are obtained a semiconductor device having good transistor characteristics and a fabrication process therefor.
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Blum David S.
McDermott Will & Emery LLP
Renesas Technology Corp.
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