Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2005-12-20

2005-12-20

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S398000

Reexamination Certificate

active

06977199

ABSTRACT:
On a silicon oxide film including the interior of an opening a semispherical RGP film is deposited. At a temperature lower than that allowing a crystal of silicon to be grown a BPTEOS film is deposited to fill the opening. Then a portion other than the semispherical RGP film introduced in the opening is chemically mechanically polished and thus removed. This contributes to reduced crystal growth of silicon at the semispherical RGP film and hence reduced scattering and/or removal of the RGP film for example when a CMP step is performed. Subsequently the semispherical RGP film is annealed to grow a crystal of silicon to form a generally spherical RGP film. Thus a storage node can have an increased surface area and a capacitor can have increased capacity.

REFERENCES:
patent: 6399440 (2002-06-01), Miao
patent: 2000-91542 (2000-03-01), None
patent: 2001-203334 (2001-07-01), None
patent: 2002-190582 (2002-07-01), None

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