Method of fabricating a semiconductor device having reduced...

Details Method of fabricating a semiconductor device having reduced... Method of fabricating a semiconductor device having reduced...

2005-06-21

2005-06-21

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000

Reexamination Certificate

active

06908853

ABSTRACT:
A method of fabricating a semiconductor device having the steps of forming an insulating layer on a silicon substrate; forming a contact hole in the insulating layer so that a portion of the silicon substrate is exposed in the contact hole; performing an interface treatment process to the exposed portion of the silicon substrate, wherein the interface treatment process includes at least a dry cleaning and a hydrogen heat treatment; and forming a selective silicon plug including single crystalline and polycrystalline silicon structures on the exposed portion of the silicon substrate.

REFERENCES:
patent: 6114236 (2000-09-01), Sugai
patent: 6215144 (2001-04-01), Saito et al.
patent: 7-283217 (1995-10-01), None
patent: 8-279477 (1996-10-01), None
patent: 10-93077 (1998-04-01), None

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