Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-09
2005-08-09
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S312000
Reexamination Certificate
active
06927118
ABSTRACT:
The present invention discloses a process of fabricating a semiconductor device comprising the steps of: forming a collector layer of a first conductivity type at a portion of a surface of a semiconductor substrate; forming a collector opening portion in a first insulating layer formed on the semiconductor substrate; epitaxially growing, on the semiconductor substrate of the collector opening portion, a semiconductor layer including a layer of a second conductivity type constituting a base layer; sequentially layering, on the semiconductor substrate, an etching stopper layer against dry etching and a masking layer against wet etching; exposing a part of the etching stopper layer by removing a part of the masking layer by means of dry etching; and by subjecting the exposed etching stopper layer to a wet etching treatment using the remaining masking layer as a mask, forming a base junction opening portion through the etching stopper layer and the masking layer.
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Asai Akira
Idota Ken
Ohnishi Teruhito
Duy Mai Anh
McDermott Will & Emery LLP
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