Semiconductor transistor having structural elements of...

Details Semiconductor transistor having structural elements of... Semiconductor transistor having structural elements of...

2005-12-27

2005-12-27

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S303000

Reexamination Certificate

active

06979622

ABSTRACT:
A transistor is formed using a semiconductor substrate and forming a control electrode overlying the semiconductor substrate. A first current electrode is formed within the semiconductor substrate and adjacent the control electrode. The first current electrode has a first predetermined semiconductor material. A second current electrode is formed within the semiconductor substrate and adjacent the control electrode to form a channel within the semiconductor substrate. The second current electrode has a second predetermined semiconductor material that is different from the first predetermined semiconductor material. The first predetermined semiconductor material is chosen to optimize bandgap energy of the first current electrode, and the second predetermined semiconductor material is chosen to optimize strain of the channel.

REFERENCES:
patent: 6297104 (2001-10-01), Tyagi et al.
patent: 6596594 (2003-07-01), Guo
patent: 6706614 (2004-03-01), An et al.
patent: 2004/0000691 (2004-01-01), Wieczorek et al.
patent: WO 03/012850 (2003-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor transistor having structural elements of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor transistor having structural elements of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor transistor having structural elements of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3515592