Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-21
2005-06-21
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
06908841
ABSTRACT:
A semiconductor device (200) having support structures (218, 226, 236) beneath wirebond regions (214) of contact pads (204) and a method of forming same. Low modulus dielectric layers (216, 222, 232) are disposed over a workpiece (212). Support structures (218, 226, 236) are formed in the low modulus dielectric layers (216, 222, 232), and support vias (224, 234) are formed between the support structures (218, 226, 236). A high modulus dielectric film (220, 230) is disposed between each low modulus dielectric layer (216, 222, 232), and a high modulus dielectric layer (256) is disposed over the top low modulus dielectric layer (232). Contact pads (204) are formed in the high modulus dielectric layer (256). Each support via (234) within the low modulus dielectric layer (232) resides directly above a support via (224) in the underlying low modulus dielectric layer (222), to form a plurality of via support stacks within the low modulus dielectric layers (216, 222, 232).
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Anderson David
Barth Hans-Joachim
Burrell Lloyd G.
Chan Joseph
Crabbe Emmanuel F.
Infineon - Technologies AG
Slater & Matsil L.L.P.
Zarneke David A.
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