Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2005-12-27
2005-12-27
Schilling, Richard L. (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S315000, C430S319000, C430S324000, C438S003000, C438S059000, C438S253000, C438S296000, C438S381000, C438S698000
Reexamination Certificate
active
06979526
ABSTRACT:
A method of manufacturing a resistive semiconductor memory device (10), comprising depositing an insulating layer (34) over a workpiece (30), and defining a pattern for a plurality of alignment marks (22) and a plurality of conductive lines (54) within the insulating layer (34). A resist (50) is formed over the alignment marks (22), and a conductive material (52) is deposited over the wafer to fill the conductive pattern. The wafer is chemically-mechanically polished to remove excess conductive material from over the insulating layer and form conductive lines (54). The resist (50) is removed from over the alignment marks (22), and the alignment marks (22) are used for alignment of subsequently deposited layers of the resistive memory device (10).
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Infineon - Technologies AG
Schilling Richard L.
Slater & Matsil L.L.P.
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