Method of forming buried wiring in semiconductor device

Details Method of forming buried wiring in semiconductor device Method of forming buried wiring in semiconductor device

2005-11-22

2005-11-22

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C438S692000

Reexamination Certificate

active

06967157

ABSTRACT:
A method of forming buried wiring, includes the steps of forming an insulating layer having a trench on a semiconductor substrate; forming a conductive layer mainly composed of copper on the insulating layer in such a manner that the trench is filled with the conductive layer; removing an oxide layer generated in a surface of the conductive layer by oxidation; forming a cap layer made of a material having less mechanical strength than the oxide layer, on the conductive layer; and removing the cap layer and a part of the conductive layer by chemical mechanical polishing in such a manner that the conductive layer is left in the trench.

REFERENCES:
patent: 6670274 (2003-12-01), Liu et al.
patent: 2002/0076925 (2002-06-01), Marieb et al.
patent: 2004/0188850 (2004-09-01), Lee et al.
patent: 2004/0266171 (2004-12-01), Aoki et al.
patent: 2000-003912 (2000-01-01), None
patent: 2002-359244 (2002-12-01), None

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