Method of forming a memory device and semiconductor device

Details Method of forming a memory device and semiconductor device Method of forming a memory device and semiconductor device

2005-08-02

2005-08-02

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S778000

Reexamination Certificate

active

06924186

ABSTRACT:
A novel technique to quench electrical defects in CVD Al2O3layers is disclosed. A small amount of silicon dopant to the aluminum oxide film reduces the leakage current as well as the gap interface trap density at the dielectric/silicon interface. The implanted silicon gives a better interface and improves the leakage characteristics of the dielectric.

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