Method for fabricating semiconductor integrated circuit device

Details Method for fabricating semiconductor integrated circuit device Method for fabricating semiconductor integrated circuit device

2005-02-15

2005-02-15

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S770000, C438S778000, C438S680000, C438S663000, C438S787000, C438S795000

Reexamination Certificate

active

06855642

ABSTRACT:
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

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