Semiconductor integrated circuits, fabrication method for...

Details Semiconductor integrated circuits, fabrication method for... Semiconductor integrated circuits, fabrication method for...

2005-06-07

2005-06-07

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S382000, C257S388000, C257S412000, C257S640000, C257S649000, C257S760000

Reexamination Certificate

active

06903422

ABSTRACT:
A semiconductor integrated circuit is disclosed, which includes a semiconductor substrate, a memory cell formed on the semiconductor substrate and having a first gate insulating layer of a stacked structure which includes a silicon nitride layer to become a charge storage layer, and a transistor formed on the semiconductor substrate and having a second gate insulating layer. Here, source and drain diffused layers of the memory cell are covered with a part of the first gate insulating layer, and metal silicide layers are formed on surfaces of source and drain diffused layers of the transistor.

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