Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-02
2005-08-02
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S672000, C438S687000, C438S692000, C438S693000
Reexamination Certificate
active
06924227
ABSTRACT:
A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.
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Taiwanese Patent Publication No. 428023, published Apr. 1, 2001.
Hattori Masayuki
Kawahashi Nobuo
Kurashima Nobuyuki
Minamihaba Gaku
Nishimoto Kazuo
Finnegan Henderson Farabow Garrett & Dunner, LLP.
JSR Corporation
Lee Hsien-Ming
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