Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-11-15

2005-11-15

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C438S700000, C257S302000

Reexamination Certificate

active

06964899

ABSTRACT:
Disclosed is a semiconductor device having a bit line extending in a first direction, a plurality of transistors electrically connected to the bit line, a plurality of first electrodes arranged in the first direction and electrically connected to the transistors, a dielectric film covering upper and side surfaces of the first electrodes, and a second electrode covering the dielectric film, wherein a width of the first electrode is smaller than a distance between adjacent first electrodes and smaller than the minimum value of design rule of the semiconductor device.

REFERENCES:
patent: 5392232 (1995-02-01), Kim et al.
patent: 6642564 (2003-11-01), Ogawa et al.
patent: 4-336464 (1992-11-01), None
patent: 6-21340 (1994-01-01), None
patent: 9-283719 (1997-10-01), None
patent: 2000-31434 (2000-01-01), None
patent: 2001-189434 (2001-07-01), None
patent: 2003-23107 (2003-01-01), None
Notification of Reasons for Rejection (Office Action) for Japanese Patent Application No. 2003-103043, mailed May 10, 2005 and English translation thereof.

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