Methods of manufacturing and-type flash memory devices

Details Methods of manufacturing and-type flash memory devices Methods of manufacturing and-type flash memory devices

2005-11-29

2005-11-29

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S341000

Reexamination Certificate

active

06969653

ABSTRACT:
Example methods of manufacturing an AND-type flash memory device are disclosed. One example method may include forming a tunnel oxide layer and a first polysilicon layer in sequence on a silicon substrate; forming a floating gate by removing some part of the first polysilicon layer; forming a source/drain region at both sides of the floating gate by implanting ions into the substrate; forming spacers on sidewalls of the floating gate; depositing a sacrificial layer on the resulting substrate; exposing some part of the substrate and the floating gate; forming a first trench on the exposed part of the substrate and a second trench on the exposed part of the floating gate; depositing an oxide layer to fill the first and second trenches with the oxide layer; removing the oxide layer and the sacrificial layer through a fourth etching process until the floating gate is exposed; removing the spacers and the remaining sacrificial layer to form the floating gate with the second trench and a trench-type device isolation layer; and depositing a gate insulating layer and a second polysilicon layer to form a control gate in sequence on the resulting substrate.

REFERENCES:
patent: 6153494 (2000-11-01), Hsieh et al.
patent: 6326263 (2001-12-01), Hsieh
patent: 6566195 (2003-05-01), Rudeck
patent: 6724036 (2004-04-01), Hsieh et al.

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