Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-22
2005-11-22
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C438S424000, C438S425000, C438S426000, C438S435000, C438S437000, C438S443000, C438S723000, C438S736000, C438S739000, C438S756000
Reexamination Certificate
active
06967141
ABSTRACT:
A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion.
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Ishitsuka Norio
Kanamitsu Kenji
Suzuki Norio
Watanabe Kouzou
Antonelli, Terry Stout and Kraus, LLP.
Renesas Technology Corp.
Thomas Toniae M.
Wilczewski Mary
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