Fringing capacitor structure

Details Fringing capacitor structure Fringing capacitor structure

2005-12-13

2005-12-13

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C361S313000

Reexamination Certificate

active

06974744

ABSTRACT:
The present invention provides a circuit and method for a fringing capacitor. The fringing capacitor includes at least two conductor layers spaced apart from each other. Each conductor layer includes at least two portions. The portions include odd ones alternating with even ones. Adjacent odd ones and even ones of the portions are spaced apart. The odd ones of the portions on a first one of the conductor layers are configured to substantially overlay the odd ones of the portions on an adjacent one of the conductor layers. The even ones of the portions on the first one of the conductor layers are configured to substantially overlay the even ones of the portions on the adjacent one of the conductor layers. The odd ones of the portions on the first one of the conductor layers are electrically coupled together and to the even ones of the portions on the adjacent one of the conductor layers, thereby defining a first electrode. The even ones of the portions on the first one of the conductor layers are electrically coupled together and to the odd ones of the portions on the adjacent one of the conductor layers, thereby defining a second electrode. A dielectric is interposed between the first and second electrodes. A guardband is spaced from the first and second electrodes.

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