Semiconductor process for disposable sidewall spacers

Details Semiconductor process for disposable sidewall spacers Semiconductor process for disposable sidewall spacers

2005-02-01

2005-02-01

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S304000, C438S306000

Reexamination Certificate

active

06849515

ABSTRACT:
A semiconductor process and structure (32) uses a disposable sidewall spacer (42) associated with lightly doped drain (LDD) transistors. The disposable sidewall spacers are efficiently removed by a gaseous fluorine ambient. Either molecular or atomic fluorine gas is used to remove a silicon germanium sidewall spacer with high selectivity to exposed insulating layers. This etch process is also isotropic. An additional benefit of using a gaseous fluorine ambient is incorporation of fluorine in isolation regions (48) surrounding the transistors, thereby reducing the dielectric constant. Improved insulating properties of the isolations regions can allow increased integration.

REFERENCES:
patent: 5320974 (1994-06-01), Hori et al.
patent: 6087239 (2000-07-01), Juengling
patent: 6121093 (2000-09-01), Cheng et al.
Wolf, Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 546-551.*
Ranade, Pushkar et al.; “Application of Silicon-Germanium in the Fabrication of Ultra-shallow Extension Junctions for Sub-100 nm PMOSFETs”; IEEE Transactions on Electron Devices; Aug. 2002'; pp 1436-1443; vol. 49, No. 8; IEEE.
Parrillo, Louis C. et al.; “An Advanced 0.5μm CMOS Disposable LDD Spacer Technology”; Motorola, Advanced Products Research and Development Laboratory; Austin, TX.
U.S. Appl. No. 10/339,062, filed Jan. 2, 2003.
U.S. Appl. No. 10/631,283, filed Jul. 31, 2003.

Affiliated with

Also associated with

Rating

Semiconductor process for disposable sidewall spacers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor process for disposable sidewall spacers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor process for disposable sidewall spacers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3493819