Methods for forming polycrystalline silicon layer and...

Details Methods for forming polycrystalline silicon layer and... Methods for forming polycrystalline silicon layer and...

2005-02-01

2005-02-01

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

Reexamination Certificate

active

06849525

ABSTRACT:
A method of forming a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; depositing a catalyst metal on the amorphous silicon layer; disposing first and second electrodes contacting the amorphous silicon layer along a first direction; heating the amorphous silicon layer under a first temperature and simultaneously applying a first voltage to the first and second electrodes to form a first crystallized amorphous silicon layer; disposing third and fourth electrodes contacting the first crystallized amorphous silicon layer along a second direction, the second direction being different from the first direction; and heating the first crystallized amorphous silicon layer under a second temperature and simultaneously applying a second voltage to the third and fourth electrodes to form a secondly crystallized amorphous silicon layer.

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Song, Kyung-Sub et al. “Electric Field Effect on the Metal Induced Crystallization of Amorphous Silicon,” Electrochemical Society Proceedings, vol. 97-23; pp 75-80, 1997.

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