Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-12-27
2005-12-27
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S708000, C438S946000, C430S312000
Reexamination Certificate
active
06979604
ABSTRACT:
The present invention relates to a method of forming a pattern on a substrate and a method of manufacturing a liquid crystal display panel using the same. In order to decrease stitch defect, the shot boundary lines for respective layers of patterns do not overlap each other to be dispersed. Specifically, according to a method of forming patterns of the present invention, after a first material layer is first formed on a substrate, a first pattern is formed by performing a first photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the first material layer. Subsequently, after a second material layer is formed on the first pattern, a second pattern is formed by performing a second photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the second material layer. The shot boundary line in the second photo etching is spaced apart from the shot boundary line in the first photo etching. A liquid crystal display panel is manufactured by using this forming method.
REFERENCES:
patent: 5897978 (1999-04-01), Nakajima
patent: 5945256 (1999-08-01), Kim et al.
patent: 6020092 (2000-02-01), Sakoh
patent: 6204912 (2001-03-01), Tsuchiya et al.
patent: 6798477 (2004-09-01), Yoo et al.
patent: 11-250760 (1999-09-01), None
PCT International Search Report; International application No. PCT/KR0200376, International filing date: Mar. 5, 2002; Date of Mailing: Sep. 26, 2002.
Chung Kyuha
Hong Mun-Pyo
Lee Jung-Ho
Park Woon-Yong
Tak Young-Mi
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Smoot Stephen W.
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