Method of forming a dual-sided capacitor

Details Method of forming a dual-sided capacitor Method of forming a dual-sided capacitor

2005-02-22

2005-02-22

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S396000

Reexamination Certificate

active

06858493

ABSTRACT:
A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon (HSG) as part of a dual-sided lower capacitor electrode. Prior to the dielectric formation, the lower capacitor electrode may be optionally annealed to improve capacitance.

REFERENCES:
patent: 5959326 (1999-09-01), Aiso et al.
patent: 6087694 (2000-07-01), Ohno et al.
patent: 6090679 (2000-07-01), Lou
patent: 6174769 (2001-01-01), Lou
patent: 6245633 (2001-06-01), Lou
patent: 6362044 (2002-03-01), Shimizu et al.
patent: 6614093 (2003-09-01), Ott et al.

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