Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-23
2005-08-23
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S309000, C438S253000, C438S255000, C438S396000, C438S398000
Reexamination Certificate
active
06933552
ABSTRACT:
A honeycomb/webbed, high surface area capacitor formed by etching a storage poly using an etch mask having a plurality of micro vias. The etch mask is preferably formed by applying an HSG polysilicon layer on a surface of the storage poly with a mask layer being deposited over the HSG polysilicon layer. An upper portion of the mask layer is removed to expose the uppermost portions of the HSG polysilicon layer and the exposed HSG polysilicon layer portions are then etched, which translates the pattern of the exposed HSG polysilicon layer portions into the storage poly. The capacitor is completed by depositing a dielectric material layer over the storage poly layer and depositing a cell poly layer over the dielectric material layer.
REFERENCES:
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5149676 (1992-09-01), Kim et al.
patent: 5170233 (1992-12-01), Liu et al.
patent: 5254503 (1993-10-01), Kenney
patent: 5256587 (1993-10-01), Jun et al.
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5292677 (1994-03-01), Dennison
patent: 5340763 (1994-08-01), Dennison
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5342800 (1994-08-01), Jun
patent: 5358888 (1994-10-01), Ahn et al.
patent: 5362666 (1994-11-01), Dennison
patent: 5405799 (1995-04-01), Woo et al.
patent: 5407534 (1995-04-01), Thakur
patent: 5447878 (1995-09-01), Park et al.
patent: 5457063 (1995-10-01), Park
patent: 5459094 (1995-10-01), Jun
patent: 5491356 (1996-02-01), Dennison et al.
patent: 5508223 (1996-04-01), Tseng
patent: 5538592 (1996-07-01), Chen et al.
patent: 5608247 (1997-03-01), Brown
patent: 5612558 (1997-03-01), Harshfield
patent: 5616511 (1997-04-01), Hirota
patent: 5623243 (1997-04-01), Watanabe et al.
patent: 5658381 (1997-08-01), Thakur et al.
patent: 5686747 (1997-11-01), Jost et al.
patent: 5723373 (1998-03-01), Chang et al.
patent: 5744388 (1998-04-01), Chen
patent: 5814549 (1998-09-01), Wu
patent: 5886375 (1999-03-01), Sun
patent: 5959326 (1999-09-01), Aiso et al.
patent: 6060355 (2000-05-01), Batra et al.
patent: 6066872 (2000-05-01), Okada et al.
Clampitt Darwin A.
Green James E.
Diaz José R.
Micro)n Technology, Inc.
Thomas Tom
TraskBritt
LandOfFree
High surface area capacitors and intermediate storage poly... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High surface area capacitors and intermediate storage poly..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High surface area capacitors and intermediate storage poly... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3485251