Method of forming interlayer insulation film

Details Method of forming interlayer insulation film Method of forming interlayer insulation film

2005-06-14

2005-06-14

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S770000

Reexamination Certificate

active

06905978

ABSTRACT:
A method of forming an interlayer insulation film on a semiconductor substrate using plasma CVD includes introducing a source gas into a reaction chamber, applying radio-frequency power after the source gas is brought in, introducing an oxidizing gas with or without an additive gas into the reaction chamber after the completion of supplying the source gas and applying the radio-frequency power, and applying the radio-frequency power again. The concentration of the oxidizing gas may be 0.3% or higher and a processing time period by the oxidizing gas may be three seconds or longer.

REFERENCES:
patent: 6287889 (2001-09-01), Miyake et al.
patent: 6432846 (2002-08-01), Matsuki
patent: 6723664 (2004-04-01), Matsumura et al.
patent: 6759344 (2004-07-01), Matsuki et al.

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