Early response to plasma/charging damage by special pattern...

Details Early response to plasma/charging damage by special pattern... Early response to plasma/charging damage by special pattern...

2005-08-16

2005-08-16

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S014000, C438S017000, C257S048000

Reexamination Certificate

active

06929965

ABSTRACT:
A method of early and effective detection of plasma damage to a gate oxide layer by a special design of the active region is achieved. A plasma-damage testing structure is fabricated by providing a gate electrode overlying an active area of a semiconductor substrate wherein a gate oxide layer underlies the gate electrode. A portion of the active area underlying the gate electrode has sharp corners. The plasma-damage testing structure is exposed to a plasma environment. Electrical tests are performed to detect plasma damage to the plasma-damage testing structure. This model provides an accurate evaluation of plasma damage to actual MOSFET's.

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