Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-06-21

2005-06-21

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S592000, C438S653000, C438S656000, C438S666000

Reexamination Certificate

active

06908801

ABSTRACT:
A method of manufacturing a semiconductor device comprises forming a gate insulating film on a semiconductor substrate having first and second element regions, forming a mask on the entire surface of the gate insulating film, selectively etching the mask to form an opening for exposing a portion of the gate insulating film, forming a first conductive material film on the entire surface of the mask, patterning the first conductive material film to form a patterned first conductive material film, which is positioned in the first element region, etching away the exposed mask, forming a second conductive material having a work function different from that of the first conductive material film on the gate insulating film, and forming a first gate electrode having the first conductive material film and a second gate electrode made of the second conductive material film.

REFERENCES:
patent: 6303418 (2001-10-01), Cha et al.
patent: 6410376 (2002-06-01), Ng et al.
patent: 6444512 (2002-09-01), Madhukar et al.
patent: 6563178 (2003-05-01), Moriwaki et al.
patent: 6586288 (2003-07-01), Kim et al.
patent: 6737309 (2004-05-01), Matsuo
patent: 2001-284466 (2001-10-01), None
patent: 2002-198441 (2002-07-01), None

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