Read only memory having localized reference bit lines

Details Read only memory having localized reference bit lines Read only memory having localized reference bit lines

Filed on

1996-06-07

Date issued

1997-02-11

Examiner

Dinh, Son T.

Patent Class

Static information storage and retrieval

SubClass

Read/write circuit

SubSubClass

Differential sensing

Other Related Categories

365203, 36523003, G11C 700

Type

Patent

Status

active

Patent number

056027885

Description

ABSTRACT:
A growable read only memory (ROM) provides improved performance over a wide range of array sizes by incorporating a localized reference bitline that accurately tracks changes in loading and variations in process parameters. The reference bitline is input into one side of a differential sense amplifier while a selected data bitline is input into the other side. The reference bitline is precharged and includes two columns, a first column includes devices that are matched to memory cell devices wherein a device of the selected word line will be selected to discharge the referenced bitline. The second column includes a recessed oxide device corresponding to each memory cell in the column. The combination of the two columns ensures that the reference bitline will discharge at a predetermined rate that tracks the rate at which a selected contact programmed memory cell discharges.

REFERENCES:
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patent: 4384345 (1983-05-01), Mikome
patent: 4658382 (1987-04-01), Tran et al.
patent: 4982364 (1991-01-01), Iwahashi
patent: 5023839 (1991-06-01), Suzuki et al.
patent: 5040148 (1991-08-01), Nakai et al.
patent: 5191552 (1993-03-01), Nakai et al.
patent: 5197028 (1993-03-01), Nakai et al.
patent: 5539694 (1996-07-01), Rouy
IBM Data Book Doc. No. ADC05LDBU-01 pp. 902-903, Mar., 1995.

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