Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-28
2005-06-28
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S199000, C438S233000, C438S525000
Reexamination Certificate
active
06911366
ABSTRACT:
A method for forming contact openings in various locations of the upper surface of an integrated circuit having raised areas, critical openings having to be formed between two neighboring raised areas, including the steps of covering the entire structure with a first protection layer; forming non-critical openings in the first protection layer; coating the structure with a second protection layer; performing an oblique irradiation so that the second protection layer is not irradiated at the bottom of the regions located between two raised areas; removing the non-irradiated portions of the second protection layer; removing the portions of the first protection layer located under the second protection layer at the locations where this second protection layer has been removed; and removing the irradiated portions of the second protection layer.
REFERENCES:
patent: 6309975 (2001-10-01), Wu et al.
patent: 6426253 (2002-07-01), Tews et al.
patent: 2002/0110976 (2002-08-01), Coronel et al.
French Search Report from French Patent Application 02/09347, filed Jul. 23, 2002.
Coronel Philippe
Ferreira Paul
Jorgenson Lisa K.
Morris James H.
Pham Long
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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