Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-10-04
2005-10-04
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000
Reexamination Certificate
active
06952362
ABSTRACT:
Structures and methods for ferroelectric write once read only memory adapted to be programmed for long retention archival storage are provided. The write once read only memory cell includes a charge amplifier transistor. The transistor includes a source region, a drain region, and a channel region located between the source and the drain regions. A gate stack is located above the channel region. The gate stack includes; a gate oxide layer, a polysilicon interconnect on the gate oxide, a ferroelectric dielectric coupled to the polysilicon interconnect, and a control electrode coupled to the ferroelectric dielectric. A plug couples the source region to an array plate. A transmission line is coupled to the drain region.
REFERENCES:
patent: 3641516 (1972-02-01), Casrucci et al.
patent: 3665423 (1972-05-01), Nakamuma et al.
patent: 3877054 (1975-04-01), Boulin et al.
patent: 3964085 (1976-06-01), Kahng et al.
patent: 4152627 (1979-05-01), Priel et al.
patent: 4217601 (1980-08-01), DeKeersmaecker et al.
patent: 4888733 (1989-12-01), Mobley
patent: 5042011 (1991-08-01), Casper et al.
patent: 5280205 (1994-01-01), Green et al.
patent: 5303182 (1994-04-01), Nakao et al.
patent: 5399516 (1995-03-01), Bergendahl et al.
patent: 5410504 (1995-04-01), Ward
patent: 5457649 (1995-10-01), Eichman et al.
patent: 5530581 (1996-06-01), Cogan
patent: 5530668 (1996-06-01), Chern et al.
patent: 5539279 (1996-07-01), Takeuchi et al.
patent: 5541871 (1996-07-01), Nishimura et al.
patent: 5541872 (1996-07-01), Lowrey et al.
patent: 5550770 (1996-08-01), Kuroda
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5600587 (1997-02-01), Koike
patent: 5627785 (1997-05-01), Gilliam et al.
patent: 5740104 (1998-04-01), Forbes
patent: 5768192 (1998-06-01), Eitan
patent: 5801401 (1998-09-01), Forbes
patent: 5828605 (1998-10-01), Peng et al.
patent: 5852306 (1998-12-01), Forbes
patent: 5856688 (1999-01-01), Lee et al.
patent: 5886368 (1999-03-01), Forbes et al.
patent: 5912488 (1999-06-01), Kim et al.
patent: 5936274 (1999-08-01), Forbes et al.
patent: 5943262 (1999-08-01), Choi
patent: 5973356 (1999-10-01), Noble et al.
patent: 5989958 (1999-11-01), Forbes
patent: 5991225 (1999-11-01), Forbes et al.
patent: 6031263 (2000-02-01), Forbes et al.
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6072209 (2000-06-01), Noble et al.
patent: 6115281 (2000-09-01), Aggarwal et al.
patent: 6125062 (2000-09-01), Ahn et al.
patent: 6140181 (2000-10-01), Forbes et al.
patent: 6141237 (2000-10-01), Eliason et al.
patent: 6141238 (2000-10-01), Forbes et al.
patent: 6141260 (2000-10-01), Ahn et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6150687 (2000-11-01), Noble et al.
patent: 6153468 (2000-11-01), Forbes et al.
patent: 6166401 (2000-12-01), Forbes
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6194228 (2001-02-01), Fujiki et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6212103 (2001-04-01), Ahrens et al.
patent: 6232643 (2001-05-01), Forbes et al.
patent: 6238976 (2001-05-01), Noble et al.
patent: 6243300 (2001-06-01), Sunkavalli
patent: 6246606 (2001-06-01), Forbes et al.
patent: 6249020 (2001-06-01), Forbes et al.
patent: 6252793 (2001-06-01), Allen et al.
patent: 6269023 (2001-07-01), Derhacobian et al.
patent: 6281144 (2001-08-01), Cleary et al.
patent: 6294813 (2001-09-01), Forbes et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6302964 (2001-10-01), Umotoy et al.
patent: 6303481 (2001-10-01), Park
patent: 6313518 (2001-11-01), Ahn et al.
patent: 6337805 (2002-01-01), Forbes et al.
patent: 6351411 (2002-02-01), Forbes et al.
patent: 6368941 (2002-04-01), Chen et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6387712 (2002-05-01), Yano et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6432779 (2002-08-01), Hobbs et al.
patent: 6438031 (2002-08-01), Fastow
patent: 6444039 (2002-09-01), Nguyen
patent: 6444895 (2002-09-01), Nikawa
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6445030 (2002-09-01), Wu et al.
patent: 6449188 (2002-09-01), Fastow
patent: 6456531 (2002-09-01), Wang et al.
patent: 6456536 (2002-09-01), Sobek et al.
patent: 6458701 (2002-10-01), Chae et al.
patent: 6459618 (2002-10-01), Wang
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6487121 (2002-11-01), Thurgate et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6498362 (2002-12-01), Forbes et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6521958 (2003-02-01), Forbes et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6545314 (2003-04-01), Forbes et al.
patent: 6552387 (2003-04-01), Eitan
patent: 6559014 (2003-05-01), Jeon
patent: 6567303 (2003-05-01), Hamilton et al.
patent: 6567312 (2003-05-01), Torii et al.
patent: 6570787 (2003-05-01), Wang et al.
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 6586785 (2003-07-01), Flagan et al.
patent: 2002/0027264 (2002-03-01), Forbes et al.
patent: 2002/0036939 (2002-03-01), Tsai et al.
patent: 2002/0074565 (2002-06-01), Flagan et al.
patent: 2002/0109158 (2002-08-01), Forbes et al
patent: 2002/0155688 (2002-10-01), Ahn et al.
patent: 2002/0155689 (2002-10-01), Ahn et al.
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2003/0017717 (2003-01-01), Ahn et al.
Abbas, S. A., et al., “N-Channel Igfet Design Limitations Due to Hot Electron Trapping”,Technical Digest, International Electron Devices Meeting,, Washington, DC,(Dec. 1975),35-38.
Adelmann, C , et al., “Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AIN”,Journal of Applied Physics, 91(8), (Apr. 15, 2002),5498-5500.
Ahn, Seong-Deok , et al., “Surface Morphology Improvement of Metalorganic Chemical Vapor Deposition Al Films by Layered Deposition of Al and Ultrathin TiN”,Japanese Journal of Applied Physics, Part 1(Regular Papers, Short Notes&Review Papers),39(6A), (Jun. 2000),3349-3354.
Akasaki, I. , “Effects of AIN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and Ga(1-×)Al(×)N [0> × (< or =) 0.4] Films Grown on Sapphire Substrate by MOVPE”,Journal of Crystal Growth, 98, (1989),209-219.
Alen, Petra , et al., “Atomic LAyer Deposition of Ta(Al)N(C) Thin Films Using Trimethylaluminum as a Reducing Agent”,Journal of the Electrochemical Society, 148(10), (Oct. 2001),G566-G571.
Asari, K , et al., “Multi-mode and multi-level technologies for FeRAM embedded reconfigurable hardware”,Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International, Feb. 15-17, 1999, (1999),106-107.
Benjamin, M. , “UV Photoemission Study of Heteroepitaxial AlGaN Films Grown on 6H-SiC”,Applied Surface Science, 104/105, (Sep. 1996),455-460.
Bermudez, V. , “The Growth and Properties of Al and AlN Films on GaN(0001)-(1×1)”,Journal of Applied Physics, 79(1), (Jan. 1996),110-119.
Britton, J , et al., “Metal-nitride-oxide IC memory retains data for meter reader”,Electronics, 45(22), (Oct. 23, 1972),119-23.
Chae, Junghun , et al., “Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide”,Electrochemical&Solid-State Letters, 5(6), (Jun. 2002),C64-C66.
Chaitsak, Suticai , et al., “Cu(InGa)Se/sub 2/ thin-film solar cells with high resistivity ZnO buffer layers deposited by atomic layer deposition”,Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes&Review Papers,38(9A), (Sep. 1999),4989-4992.
Cricchi, J R., et al., “Hardened MNOS/SOS electrically reprogrammable nonvolatile memory”,IEEE Transactions on Nuclear Science, 24(6), (Dec. 1997),2185-9.
Dimaria, D J., “Graded or stepped energy band-gap-insulator MIS structures (GI-MIS or SI-MIS)”,Journal of Applied Physics, 50(9), (Sep. 1979),5826-5829.
Dipert, Brian , “Flash Memory Goes Mainstream”,IEEE Spectrum, 30(10), (Oct. 1993),48-52.
Eitan, Boaz , “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile
Micro)n Technology, Inc.
Phan Trong
Schwegman Lundberg Woessner & Kluth P.A.
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