Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-08
2005-02-08
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S381000
Reexamination Certificate
active
06852586
ABSTRACT:
The present invention provides a selectively conductive organic semiconductor (e.g., polymer) device that can be utilized as a memory cell. A polymer solution including a conducting polymer self assembles relative to a conductive electrode. The process affords self-assembly such that a shortest conductive path can be achieved. The method includes depositing a concentrated solution of conducting polymer on a conductive surface, applying heat and optionally a vacuum, and permitting the conducting polymer to self-assemble into an organic semiconductor. The organic semiconductor can be employed within single and multi-cell memory devices by forming a structure with two or more electrodes while employing the organic semiconductor along with a passive device between the electrodes. A partitioning component can be integrated with the memory device to facilitate programming and stacking of additional memory cells on top of or in association with previously formed cells.
REFERENCES:
patent: 6570204 (2003-05-01), Agarwal
Buynoski Matthew S.
Okoroanyanwu Uzodinma
Pangrle Suzette K.
Tripsas Nicholas H.
Advanced Micro Devices , Inc.
Amin & Turocy LLP
Tsai H. Jey
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