Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-08
2005-11-08
Chambliss, Alonzo (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S320000, C438S322000, C438S338000, C438S353000, C257S554000, C257S560000, C257S564000
Reexamination Certificate
active
06962842
ABSTRACT:
A method of removing a sacrificial emitter feature in a bipolar complementary metal oxide semiconductor (BICMOS) process with a super self-aligned bipolar junction transistor (BJT) is disclosed. According to the new method, a mask layer, such as an oxide deposited using high density plasma (HDP) techniques, is deposited over an extrinsic base layer and over a sacrificial emitter structure. Because of the particular characteristic of the HDP oxide, the deposition of HDP oxide forms a triangular-like structure over the sacrificial emitter structure having a maximum thickness less than the thickness of the HDP oxide over the extrinsic base layer. This facilitates the complete removal of the HDP oxide above the sacrificial emitter layer without the complete removal of the HDP oxide above the extrinsic base layer. This allows the removal of the sacrificial emitter structure while the remaining HDP oxide, serving as a mask, protects the underlying extrinsic base layer.
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Kalnitsky Alexander
Park Sang H.
Wang Larry
Zekeriya Viktor
Blakely , Sokoloff, Taylor & Zafman LLP
Chambliss Alonzo
Maxim Integrated Products Inc.
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