Methods of forming drain/source extension structures of a...

Details Methods of forming drain/source extension structures of a... Methods of forming drain/source extension structures of a...

2005-02-01

2005-02-01

Loke, Steven (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S307000, C438S306000, C438S301000, C438S595000

Reexamination Certificate

active

06849516

ABSTRACT:
According to one illustrative embodiment of the present invention, a method of forming a field effect transistor includes the formation of a doped high-k dielectric layer above a substrate including a gate electrode formed over an active region and separated therefrom by a gate insulation layer. A heat treatment is carried out with the substrate to diffuse dopants from the high-k dielectric layer into the active region to form extension regions. The high-k dielectric layer is patterned to form sidewall spacers at sidewalls of the gate electrode and an implantation process is carried out with the sidewall spacers as implantation mask to form source and drain regions.

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