Method of forming a via contact structure using a dual...

Details Method of forming a via contact structure using a dual... Method of forming a via contact structure using a dual...

2005-08-02

2005-08-02

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C257S652000

Reexamination Certificate

active

06924228

ABSTRACT:
A method of forming a via contact structure using a dual damascene technique is provided. The method includes forming a lower interconnection line on a semiconductor substrate and sequentially forming an inter-metal dielectric layer and a hard mask layer on the semiconductor substrate having the lower interconnection line. The hard mask layer and the inter-metal dielectric layer are successivley patterned to form a via hole that exposes the lower interconnnection line. A sacrificial layer filling the via hole is formed on the hard mask layer. The sacrificial layer and the hard mask layer are patterned to form a first sacrificial layer pattern having an opening that crosses over the via hole and a second sacrificial layer pattern that remains in the via hole and to simultaneously form a hard mask pattern underneath the first sacrificial layer pattern. The inter-metal dielectric layer is partially etched using the hard mask pattern as an etching mask, thereby forming a trench in the inter-metal dielectric layer. The second sacrificial layer pattern is selectively removed to expose the the lower interconnection line.

REFERENCES:
patent: 5539255 (1996-07-01), Cronin
patent: 6060380 (2000-05-01), Subramanian et al.
patent: 6156643 (2000-12-01), Chan et al.
patent: 6218287 (2001-04-01), Matsumoto
patent: 6309962 (2001-10-01), Chen et al.
patent: 6312874 (2001-11-01), Chan et al.
patent: 6319809 (2001-11-01), Chang et al.
patent: 6323121 (2001-11-01), Liu et al.
patent: 6383912 (2002-05-01), Chung et al.
patent: 6406995 (2002-06-01), Hussein et al.
patent: 6514852 (2003-02-01), Usami
patent: 6548401 (2003-04-01), Trivedi
patent: 6573168 (2003-06-01), Kim et al.
patent: 6583047 (2003-06-01), Daniels et al.
patent: 6649515 (2003-11-01), Moon et al.
patent: 6724069 (2004-04-01), Dalton et al.
patent: 6743713 (2004-06-01), Mukherjee-Roy et al.
patent: 6787448 (2004-09-01), Chung
patent: 6812131 (2004-11-01), Kennedy et al.
patent: 2001/0021581 (2001-09-01), Moon et al.
patent: 2003/0077894 (2003-04-01), Ryu
patent: 2003/0082905 (2003-05-01), Hung et al.
patent: 2003/0119305 (2003-06-01), Huang et al.
patent: 2003/0137055 (2003-07-01), Trivedi
patent: 2003/0157806 (2003-08-01), Nagahara et al.
patent: 2003/0203321 (2003-10-01), Ma et al.
patent: 2004/0036076 (2004-02-01), Arita et al.
patent: 2004/0100779 (2004-05-01), Kraft

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