Dual damascene interconnect structures having different...

Details Dual damascene interconnect structures having different... Dual damascene interconnect structures having different...

2005-10-25

2005-10-25

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S759000, C257S760000, C257S774000

Reexamination Certificate

active

06958540

ABSTRACT:
Interconnect structures are disclosed for forming dual damascene back-end-of-line (BEOL) structure using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.

REFERENCES:
patent: 5795823 (1998-08-01), Avanzino et al.
patent: 5821168 (1998-10-01), Jain
patent: 5897369 (1999-04-01), Jun
patent: 6028362 (2000-02-01), Omura
patent: 6383821 (2002-05-01), Young et al.
patent: 2004/0108217 (2004-06-01), Dubin

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