Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

2005-08-23

2005-08-23

Kennedy, Jennifer M. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C430S316000, C430S319000

Reexamination Certificate

active

06933193

ABSTRACT:
A carbon containing masking layer is patterned to include a plurality of container openings therein having minimum feature dimensions of less than or equal to 0.20 micron. The container openings respectively have at least three peripheral corner areas which are each rounded. The container forming layer is plasma etched through the masking layer openings. In one implementation, such plasma etching uses conditions effective to both a) etch the masking layer to modify shape of the masking layer openings by at least reducing degree of roundness of the at least three corners in the masking layer, and b) form container openings in the container forming layer of the modified shapes. Capacitors comprising container shapes are formed using the container openings in the container forming layer. Other implementations and aspects are disclosed.

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