Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-22
2005-02-22
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S302000, C438S301000, C438S305000
Reexamination Certificate
active
06858487
ABSTRACT:
The present invention disclosed a method for manufacturing a semiconductor device on a semiconductor substrate, the method comprising the steps of: forming a gate dielectric layer on the semiconductor substrate. A gate is formed on the gate dielectric layer. A first ion implantation is performed to form extended source and drain shallow junctions in the semiconductor substrate. Spacer are formed on the side wall of the gate with liner between the gate and the spacers. The source and drain region is formed by performing a second ion implantation. A thermal annealing is used to eliminate the implantation defect and active the dopants. A surface treatment is used to form selective polycrystalline silicon on the gate and the source and drain region, thereby forming raised source and drain. A Cobalt layer is formed on the selective polycrystalline silicon. The Cobalt layer is reacted with the selective polycrystalline silicon on the gate and the raised source and drain region to form Cobalt silicide to eliminate the surface defect and lower sheet resistance of the source/drain regions.
REFERENCES:
patent: 4998150 (1991-03-01), Rodder et al.
patent: 5156994 (1992-10-01), Moslehi
patent: 5677214 (1997-10-01), Hsu
patent: 6165903 (2000-12-01), Besser et al.
patent: 6218711 (2001-04-01), Yu
patent: 6391750 (2002-05-01), Chen et al.
patent: 6545326 (2003-04-01), Fukada et al.
patent: 6610564 (2003-08-01), Fukada et al.
Lur Water
Yang Ming-Sheng
Lindsay Jr. Walter L.
United Microelectronics Corp.
LandOfFree
Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3466026